ACTT16-800CTN

AC Thyristor Triac power switch in a SOT78 (TO-220AB) plastic package with selfprotective clamping capabilities against low and high energy transients. This "series CTN" triac will commutate the full RMS current at the maximum rated junction temperature (Tj(max) = 150 °C) without the aid of a snubber. It is used in applications where "high junction operating temperature capability" is required.

Features and Benefits
  • Clamping structure ensuring safe high over-voltage withstand capability
  • High junction operating temperature capability (Tj(max) = 150 °C)
  • High minimum IGT for guaranteed immunity to gate noise
  • Full cycle AC conduction
  • Over-voltage withstand capability to IEC 61000-4-5
  • Pin compatible with standard triacs
  • Protective self turn-on capability for high energy transients
  • Safe clamping capability for low energy over-voltage transients
  • Less sensitive gate for high noise immunity
  • Triggering in three quadrants only
  • Planar passivated for voltage ruggedness and reliability
  • High commutation capability with maximum false trigger immunity
  • Very high immunity to false turn-on by dV/dt and IEC 61000-4-4 fast transient
  • Package is RoHS compliant
  • Package meets UL94V0 flammability requirement
Applications
  • Electronic themostats (heating and cooling)
  • High power motor controls e.g washing machine and vacuum cleaners
  • Rectifier-fed DC inductive loads e.g DC motors and solenoids
  • Refrigeration and air conditioning compressors
  • Applications subject to high temperature (Tj(max) = 150 °C)
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
ACTT16-800CTN VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 126 °C     16 A
ITSM non-repetitive peak on-state current full sine wave; Tj(init) = 25 °C; tp = 20 ms     140 A
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms     150 A
Tj junction temperature       150 °C
VPP peak pulse voltage Tj = 25 °C; non-repetitive, off-state     2 kV
IGT gate trigger current VD = 12 V; IT = 100 mA; LD+ G+; Tj = 25 °C 5   35 mA
VD = 12 V; IT = 100 mA; LD+ G-; Tj = 25 °C 5   35 mA
VD = 12 V; IT = 100 mA; LD- G-; Tj = 25 °C 5   35 mA
IH holding current VD = 12 V; Tj = 25 °C     30 mA
VT on-state voltage IT = 20 A; Tj = 25 °C     1.5 V
VCL clamping voltage ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C 850     V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1500     V/µs
VDM = 536 V; Tj = 150 °C; exponential waveform; gate open circuit 1000     V/µs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/µs; gate open circuit; snubberless condition 12     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A; dVcom/dt = 10 V/µs; gate open circuit 15     A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A; dVcom/dt = 1 V/µs; gate open circuit 20     A/ms
Datasheet
Chemical Content

Chemical Content - ACTT16-800CTN

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