BT155Z-1200T
Planar passivated Silicon Controlled Rectifier in a SOT1292(IITO3P) plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance. It is used in applications where "high junction operating temperature capability" (Tj(max) = 150 °C) is required.
Features and Benefits
- High thermal cycling performance
- Planar passivated for voltage ruggedness and reliability
- High voltage capacity
- Very high current surge capability
- High junction operating temperature capability (Tj(max) = 150 °C)
Applications
- Line rectifying 50/60 Hz
- Softstart AC motor control
- DC Motor control
- Power converter
- AC power control
- Lighting and temperature control
- Uninterruptible Power Supply (UPS)
- Solid State Relay (SSR)
- Traction battery charging
- Applications subject to high temperature (Tj(max) = 150 °C)
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
BT155Z-1200T | VDRM | repetitive peak off-state voltage | 1200 | V | |||
VRRM | repetitive peak reverse voltage | 1200 | V | ||||
IT(AV) | average on-state current | half sine wave; Tmb ≤ 73 °C | 50 | A | |||
IT(RMS) | RMS on-state current | half sine wave; Tmb ≤ 73 °C; Fig. 1; Fig. 2; Fig. 3 | 79 | A | |||
ITSM | non-repetitive peak on-state current | half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 | 650 | ||||
I2t | I2t for fusing | tp = 10 ms; sine-wave pulse | 2113 | A2s | |||
dIT/dt | rate of rise of on-state current | IG = 200 mA | 150 | A/µs | |||
IGM | peak gate current | 8 | A | ||||
VRGM | peak reverse gate voltage | 5 | V | ||||
PGM | peak gate power | 20 | W | ||||
PG(AV) | average gate power | over any 20 ms period | 1 | W | |||
Tstg | storage temperature | -40 | 150 | °C | |||
Tj | junction temperature | 150 | °C |