BTA316Y-800BT

Planar passivated high commutation three quadrant triac in a SOT78D  (IITO-220) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series BT" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber where "high junction operating temperature capability" is required.

Features and Benefits

•    3Q technology for improved noise immunity
•    High commutation capability with maximum false trigger immunity
•    High immunity to false turn-on by dV/dt
•    High junction operating temperature capability (Tj(max) = 150 °C)
•    High voltage capability
•    Planar passivated for voltage ruggedness and reliability
•    Triggering in three quadrants only
•    Internally insulated package
•    Isolated mounting base with 2500 V (RMS) isolation

Applications

• Electronic themostats (heating and cooling)
• High power motor controls e.g washing machine and vacuum cleaners
• Rectifier-fed DC inductive loads e.g DC motors and solenoids
• Refrigeration and air conditioning compressors

Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
BTA316Y-800BT VDRM repetitive peak off-state voltage       800 V
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 112 °C; Fig. 1; Fig. 2; Fig. 3     16 A
ITSM non-repetitive peak on- state current full sine wave; tp = 20 ms; Tj(init) = 25 °C; Fig. 4; Fig. 5     160 A
full sine wave; tp = 16.7 ms; Tj(init) = 25 °C     176 A
Tj junction temperature       150 °C
IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+ Tj = 25 °C; Fig. 7     50 mA
VD = 12 V; IT = 0.1 A; T2+ G- Tj = 25 °C; Fig. 7     50 mA
VD = 12 V; IT = 0.1 A; T2- G- Tj = 25 °C; Fig. 7     50 mA
IH holding current VD = 12 V; Tj = 25 °C; Fig. 9     60 mA
VT on-state voltage IT = 20 A; Tj = 25 °C; Fig. 10     1.5 V
dVD/dt rate of rise of off-state voltage VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1000     V/μs
rate of rise of off-state voltage VDM = 536 V; Tj = 150 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 600     V/μs
dIcom/dt rate of change of commutating current VD = 400 V; Tj = 150 °C; IT(RMS) = 16 A; dVcom/dt = 20 V/μs; gate open circuit; snubberless condition 15     A/ms
Datasheet
Chemical Content

Chemical Content - BTA316Y-800BT

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