BYV10ED-600P
Enhanced ultrafast power diode in a SOT428 (DPAK) plastic package.
Features and Benefits
- High thermal cycling performance
- Soft recovery characteristic
- Low on-state losses
- Surface-mountable package
- Low thermal resistance
- Enhanced avalanche energy capability
Applications
- Dual Mode (DCM and CCM) PFC
- Power Factor Correction (PFC) for Interleaved Topology
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
BYV10ED-600P | VRRM | repetitive peak reverse voltage | 600 | V | |||
IF(AV) | average forward current | δ = 0.5 ; square-wave pulse; Tmb ≤ 118 °C; Fig. 1; Fig. 2; Fig. 3;118 °C; Square-wave pulse | 10 | A | |||
IFRM | repetitive peak forward current | δ = 0.5 ; tp = 25 μs; Tmb ≤ 118 °C; square-wave pulse | 20 | A | |||
IFSM | non-repetitive peak forward current | tp = 10 ms; Tj(init) = 25 °C; SIN | 70 | A | |||
tp = 8.3 ms; Tj(init) = 25 °C; SIN | 80 | A | |||||
VF | forward voltage | IF = 10 A; Tj = 25 °C | 1.5 | 2 | V | ||
IF = 10 A; Tj = 150 °C | 1.6 | V | |||||
trr | reverse recovery time | IF = 1 A; VR = 30 V; dIF/dt = 50 A/µs; Tj = 25 °C | 35 | 50 | ns | ||
IF = 10 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 25 °C | 50 | ns | |||||
IF = 10 A; VR = 200 V; dIF/dt = 200 A/µs; Tj = 125 °C | 78 | ns | |||||
EAS | non-repetitive avalanche energy | IR = 1.2 A; Tj(init) = 25 °C; L = 15 mH | 10.8 | mJ |