NXPSC06650X
Silicon Carbide Schottky diode in a TO220F-2L plastic package, designed for high frequency switched-mode power supplies.
Features and Benefits
• Highly stable switching performance
• High forward surge capability IFSM
• Extremely fast reverse recovery time
• Superior in efficiency to Silicon Diode alternatives
• Reduced losses in associated MOSFET
• Reduced EMI
• Reduced cooling requirements
• RoHS compliant
• Insulated package rated at 2500V RMS
Applications
• Power factor correction
• Telecom / Server SMPS
• UPS
• PV inverter
• PC Silverbox
• LED / OLED TV
• Motor Drives
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
NXPSC06650X | VRRM | average forward current | - | - | 650 | V | |
IF(AV) | repetitive peak reverse voltagev | δ = 0.5 ; Th ≤ 77 °C; square-wave pulse | - | - | 6 | A | |
Tj | junction temperature | - | - | 175 | °C | ||
VF | forward voltage | IF = 6 A; Tj = 25 °C; | - | 1.5 | 1.7 | V | |
Qr | recovered charge | IF = 6 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; | - | 9 | - | nC |