NXPSC20650W-A
Dual Silicon Carbide Schottky diode in a 3-lead TO-247 plastic package, designed for high frequency switched-mode power supplies. This product is qualified to AEC-Q101 standard for use in automotive applications.
Features and Benefits
- Highly stable switching performance
- High forward surge capability IFSM
- Extremely fast reverse recovery time
- Superior in efficiency to Silicon Diode alternatives
- Reduced losses in associated MOSFET
- Reduced EMI
- Reduced cooling requirements
- RoHS compliant
- AEC-Q101 compliant
- High junction operating temperature capability (Tj(max) = 175 °C)
Applications
- Power factor correction
- Telecom / Server SMPS
- UPS
- PV inverter
- PC Silverbox
- LED / OLED TV
- Motor Drives
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
NXPSC20650W-A | VRRM | repetitive peak reverse voltagev | - | - | 650 | V | |
IO(AV) | limiting average output current | Tmb ≤ 105 °C; δ = 0.5 ; squarewave pulse; both diodes conducting; | - | - | 20 | A | |
Tj | junction temperature | - | - | 175 | °C | ||
VF | forward voltage | IF = 10 A; Tj = 25 °C; per diode | - | 1.5 | 1.7 | V | |
Qr | recovered charge | IF = 10 A; dIF/dt = 500 A/μs; VR = 400 V; Tj = 25 °C; per diode | - | 16 | - | nC |