BT150-500R
Planar passivated SCR with sensitive gate in a SOT78 (TO-220AB) plastic package. This device is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Features and Benefits
- Sensitive gate
- Planar passivated for voltage ruggedness and reliability
- Direct triggering from low power drivers and logic ICs
Applications
- General purpose switching
- Protection Circuits
Type Number | Symbol | Parameter | Conditions | Min | Typ/Nom | Max | Unit |
---|---|---|---|---|---|---|---|
BT150-500R | VDRM | repetitive peak off-state voltage | 500 | V | |||
VRRM | repetitive peak reverse voltage | 500 | V | ||||
IT(AV) | average on-state current | half sine wave; Tmb ≤ 113 °C | 2.5 | A | |||
IT(RMS) | RMS on-state current | half sine wave; Tmb ≤ 113 °C | 4 | A | |||
ITSM | non-repetitive peak on-state current | half sine wave; Tj(init) = 25 °C; tp = 10 ms | 35 | A | |||
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms | 38 | A | |||||
Tj | junction temperature | 125 | °C | ||||
IGT | gate trigger current | VD = 12 V; IT = 0.1 A; Tj = 25 °C | 15 | 200 | µA | ||
IL | latching current | VD = 12 V; IG = 0.1 A; Tj = 25 °C | 0.17 | 10 | mA | ||
IH | holding current | VD = 12 V; Tj = 25 °C | 0.1 | 6 | mA | ||
dVD/dt | rate of rise of off-state voltage | VDM = 335 V; Tj = 125 °C; RGK = 100 μ; (VDM = 67% of VDRM); exponential waveform | 50 | V/µs |