NXPLQSC10650

Silicon Carbide Schottky diode in a TO220-2L plastic package, designed for high frequency switched-mode power supplies.

Features and Benefits
  • Super low capacitance and recovery charge
  • Highly stable switching performance
  • High forward surge capability IFSM
  • Extremely fast reverse recovery time
  • Superior in efficiency to Silicon Diode alternatives
  • Reduced losses in associated MOSFET
  • Reduced EMI
  • Reduced cooling requirements
  • RoHS compliant
Applications
  • Power factor correction
  • Telecom / Server SMPS
  • UPS
  • PV inverter
  • PC Silverbox
  • LED / OLED TV
  • Motor Drives
Parametric
Package
Quality, reliability & chemical content
Ordering
Datasheet
Type Number Symbol Parameter Conditions Min Typ/Nom Max Unit
NXPLQSC10650 VRRM repetitive peak reverse voltage       650 V
IF(AV) average forward current δ = 0.5 ; Tmb ≤ 87 °C; square-wave pulse; Fig. 1; Fig. 2; Fig. 3     10 A
IFSM non-repetitive peak on-state current tp = 10 ms; Tj(init) = 25 °C; sine-wave pulse     48 A
non-repetitive peak forward current tp = 10 µs; Tj(init) = 25 °C; square-wave pulse     385 A
Tj junction temperature       175 °C
VF forward voltage IF = 10 A; Tj= 25 °C; Fig. 5   1.65 1.85 V
IF = 10 A; Tj= 150 °C; Fig. 5   2.1 2.5 V
Qr recovered charge IF = 10 A; dIF/dt = 500 A/µs; VR = 400 V; Tj = 25 °C; Fig. 6   12   nC
Datasheet
Chemical Content

Chemical Content - NXPLQSC10650

As a proactive and sustainable company, WeEn Semiconductors has decided to publish chemical content information of its product portfolio through direct Internet access. With this information, we can provide data to our customers to facilitate any assessment regarding compliance to the RoHS directive and lead-free status. WeEn Semiconductors has set a standard in the semiconductor business with this detailed level of data, directly retrieved from its general product database. WeEn Semiconductors products are compliant to the EU Directives RoHS, ELV and the China RoHS.

Disclaimer

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